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APT83GU30B APT83GU30S
300V
POWER MOS 7 IGBT
TO-247
(R)
The POWER MOS 7(R) IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
D3PAK
C
G
G
E
C
* Low Conduction Loss * Low Gate Charge * Ultrafast Tail Current shutoff
MAXIMUM RATINGS
Symbol VCES VGE VGEM IC1 IC2 ICM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient Continuous Collector Current @
* SSOA rated
E
C G E
All Ratings: TC = 25C unless otherwise specified.
APT83GU30B_S UNIT
300 20 30
7
Volts
TC = 25C
100 83 295 295A @ 300V 543 -55 to 150 300
Watts C Amps
Continuous Collector Current @ TC = 100C Pulsed Collector Current
1
@ TC = 150C
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250A) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25C) MIN TYP MAX UNIT
300 3 4.5 1.5 1.5 250
A nA
2-2004 050-7465 Rev A
6 2.0
Volts
Collector-Emitter On Voltage (VGE = 15V, I C = 45A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 45A, Tj = 125C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25C)
2 2
I CES I GES
Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V)
2500 100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT83GU30B_S
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 150V I C = 45A TJ = 150C, R G = 5, VGE = 15V, L = 100H,VCE = 300V Inductive Switching (25C) VCC = 200V VGE = 15V I C = 45A
4 5
MIN
TYP
MAX
UNIT
4385 406 31 7.0 144 29 44 295 69 29 308 122 TBD 189 354 69 29 355 226 TBD 287 503
MIN TYP MAX UNIT C/W gm ns ns A nC V pF
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area
td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Symbol RJC RJC WT
Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-on Switching Energy (Diode) Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy
4 5 6
R G = 20 TJ = +25C
J
Inductive Switching (125C) VCC = 200V VGE = 15V I C = 45A R G = 20 TJ = +125C
Turn-on Switching Energy (Diode) Turn-off Switching Energy
6
J
THERMAL AND MECHANICAL CHARACTERISTICS
Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight
0.23 N/A 5.90
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. A Combi device is used for the clamping diode as shown in the Eon2 test circuit. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 Countinous current limited by package lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7465
Rev A
2-2004
TYPICAL PERFORMANCE CURVES
60
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
APT83GU30B_S
60 50
VGE = 10V. 250s PULSE TEST <0.5 % DUTY CYCLE
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
50
TC=-55C 40
40 30
30 20 TC=25C TC=125C 0 0 0.5 1 1.5 2 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
20 TC=25C TC=125C TC=-55C
10 0
10
0 0.5 1 1.5 2 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics(VGE = 15V) 300
VGE, GATE-TO-EMITTER VOLTAGE (V)
250s PULSE TEST <0.5 % DUTY CYCLE
FIGURE 2, Output Characteristics (VGE = 10V) 16 14 12 10 8 VCE = 240V 6 4 2 0 0 20 40 60 80 100 120 140 160 GATE CHARGE (nC) FIGURE 4, Gate Charge IC = 90A 1.5 IC = 45A VCE = 150V
IC = 45A TJ = 25C
IC, COLLECTOR CURRENT (A)
250 200
VCE = 60V
150 TJ = -55C TJ = 25C 50 TJ = 125C 0 0 234 56 7 8 9 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
100
1
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
3.5 3 2.5 2 1.5 1 0.5 0 IC= 90A
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
4
2
IC = 22.5A 1.0
IC= 45A IC= 22.5A
0.5
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
6 7 8 9 10 11 12 13 14 15 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.2
5
-25 0 25 50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 200
0 -50
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
IC, DC COLLECTOR CURRENT(A)
1.15 1.10 1.05 1.0 0.95 0.9 0.85 0.8 -50
180 160 140 120 100 80 60 40 20 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 0 -50
2-2004 050-7465 Rev A
Lead Temperature Limited
-25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
APT83GU30B_S
80
td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns)
400 350 300 250 200 150 100 50 0 VCE = 200V RG = 20 L = 100 H
VGE =15V,TJ=25C VGE =15V,TJ=125C
70 VGE= 15V 60 50 40 30 20 10 VCE = 200V TJ = 25C, TJ =125C RG = 20 L = 100 H
0 10 20 30 40 50 60 70 80 90 100 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 80 70
RG = 20, L = 100H, VCE = 200V
10 20 30 40 50 60 70 80 90 100 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 250
200 60
tr, RISE TIME (ns) tf, FALL TIME (ns)
TJ = 125C, VGE = 10V or 15V
50 40 30 20
150
100
TJ = 25C, VGE = 10V or 15V
50 10
TJ = 25 or 125C,VGE = 15V RG = 20, L = 100H, VCE = 200V
0 10 20 30 40 50 60 70 80 90 100 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 1000
EON2, TURN ON ENERGY LOSS (J)
VCE = 200V L = 100 H RG = 20
20 30 40 50 60 70 80 90 100 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 1600
EOFF, TURN OFF ENERGY LOSS (J)
0
10
1400
TJ = 125C, VGE = 10V or 15V
800
TJ =125C, VGE=15V
1200 1000 800 600 400 200 10 20 30 40 50 60 70 80 90 100 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 2000
VCE = 200V VGE = +15V RG = 20 VCE = 200V L = 100 H RG = 20
600
400
200
TJ = 25C, VGE=15V
0 10 20 30 40 50 60 70 80 90 100 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 2000
SWITCHING ENERGY LOSSES (J)
VCE = 200V VGE = +15V TJ = 125C
0
TJ = 25C, VGE = 10V or 15V
SWITCHING ENERGY LOSSES (J)
Eoff 90A 1500
1500 Eoff 90A 1000 Eon2 90A
1000 Eon2 90A 500 Eon2 45A 0 Eon2 22.5A 0 Eoff 45A
2-2004
500
Eoff 45A Eoff 22.5A
Eon2 45A Eon2 22.5A
Rev A
Eoff 22.5A
050-7465
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
0
5
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
10,000 Cies 300
C, CAPACITANCE ( F) IC, COLLECTOR CURRENT (A)
APT83GU30B_S
350
250 200 150 100 50 0
P
1,000 500 Coes
100 50 Cres
10 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage
0 50 100 150 200 250 300 350 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18, Minimim Switching Safe Operating Area
0.25 0.9 0.20 0.7 0.15 0.5 0.10 0.3 0.05 0.1 0.05 0 10-5 10-4 SINGLE PULSE Note:
PDM t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
ZJC, THERMAL IMPEDANCE (C/W)
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
RC MODEL
250
FMAX, OPERATING FREQUENCY (kHz)
Junction temp. ( C) 0.0106 0.00663F
100
Power (watts)
0.0868
0.0106F
50
Fmax = min(f max1 , f max 2 ) f max1 =
TJ = 125C TC = 75C D = 50 % VCE = 200V RG = 5
0.05 t d (on ) + t r + t d(off ) + t f Pdiss - Pcond E on 2 + E off
0.133 Case temperature
0.262F
f max 2 = Pdiss =
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
30 50 70 90 110 130 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
10
TJ - TC R JC
10
050-7465
Rev A
2-2004
APT83GU30B_S
APT15DS30
10% td(on) tr
Gate Voltage
TJ = 125 C
Collector Current
V CC
IC
V CE
90%
5% 10%
5%
Collector Voltage
A D.U.T.
Switching Energy
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
VTEST
90% Gate Voltage
TJ = 125 C
A
*DRIVER SAME TYPE AS D.U.T.
td(off)
Collector Current
tf
90%
V CE IC 100uH
Collector Voltage Switching Energy
10% 0
A DRIVER*
V CLAMP
B
D.U.T.
Figure 23, Turn-off Switching Waveforms and Definitions
Figure 24, EON1 Test Circuit
Collector (Heat Sink)
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062)
15.95 (.628) 16.05 (.632)
1.04 (.041) 1.15 (.045)
13.41 (.528) 13.51 (.532)
Collector
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99 (.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
0.46 (.018) 0.56 (.022) 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 1.22 (.048) 1.32 (.052) 1.98 (.078) 2.08 (.082)
1.27 (.050) 1.40 (.055)
3.81 (.150) 4.06 (.160) (Base of Lead)
2-2004
Rev A
Gate Collector Emitter
5.45 (.215) BSC {2 Plcs.}
Heat Sink (Collector) and Leads are Plated
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
050-7465
Dimensions in Millimeters and (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
Emitter Collector Gate Dimensions in Millimeters (Inches)
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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